ZVS with igbt?

You may see me my stupidity:
can also igbt BB´s be used instead of the mosfet BB´s zvs for one? As far as I know some here already did that. The 20N60 of the Pollin are just as good for this, like the twice as expensive IRFP460.

but for what else, except switching applications are parts are genuine Rais. Thank you only once for your answer.

have a few brummer. and electrical testing equipment wanted to try it. works fine with the two toshiba BB´s. IGBT's are not the disadvantages of bipolar and MOSFET combines?
The high voltage drop of 0.7 of the CE course and the parasitic Capacitances of the gates?

IGBT's is so where and why? You can insert IGBTs, where there is no mosfets ;) The capacity of the gate is usually not so important, except to build TCs as we. The drop-out voltage is also not relevant, since it uses IGBT Samuels usually only at high voltages, for which they are even better, than other transistors (or have you seen Schonmal a 3300V Mosfetbrick which has quite incidentally even 11kW PTOT?) You could now say, an IGBT has both advantages of FET and bipolar technology, simple control via the gate(FET) and the CE low voltage drop (0.7 2.5, sometimes higher depending on the performance and design of IGBT). IGBT is used almost always only high voltages (power), high-voltage, much lower switching frequencies (often only 4-20 kHz). Thus, the voltage drop and the capacity of the gate is not disturbing. Also, IGBT in much larger power ratings and with higher dielectric strength than FET can be produced. Modern IGBT already are able to work with switching frequencies up to about 500 kHz.

FET used to compare usually MΩ max 1000V and switching frequencies several MHz, and in the low voltage range with very low impedance DS distances of a few. IGBTs are still the significant disadvantage that you never even not temporarily exceed the nominal current.

Usually for a short time, MOSFETs tolerate 4 up 8 times the rated current. For a short time has meant that they tolerate it as long as the barrier does not overheat, so a few tens of ms. For MOSFETs, overloading is not so problematic, because they have switched a characteristic of resistance (RDS).

At IGBTs is the collector-emitter voltage conductive always at approx 0, 7...2, 5V, as yohfreaker already has written. The stupid, however, is that exceeded the permissible current this voltage drop also rapidly increase. Probably is the collector-emitter channel in saturation.
A 30A-IGBT should probably have at 40A power so 10-15V collector-to-emitter voltage. : omg:
That makes then 400-600W power loss (so about 10 times more than at 30A), which the IGBT naturally ruck no time can overheat.
A 30A-Mosfet would have only 1,8mal so much dissipation 40A as at 30A. He would take it a while.

Therefore you must make sure when using IGBTs attention as no power peaks occur which exceed the nominal current of the IGBT. The C-E channel is in a State of saturation in, otherwise the VCE would have higher voltage...

What IGBT type you used there, where so much increases the Vcesat overload?

z.B a STGE200NB60S, datasheet, http://www.stmicro.fr/stonline/products/literature/ds/9145.pdf
rated @ 150A has a maximum pulse current from 400A, while the Vcesat from 2V to 150A rises only to 4V at 400A(puls-max).
According to the data sheet, you can safely use the IGBT-230A and remains far below the maximum power dissipation. I've read that only somewhere an IGBT type was also uncredited. Then it is but apparently but not the right way. Or at least, not all IGBTs have this problem. The > problem not at all, but for many seems to appear, I tried once my laser NT on IGBT to build, trying first with small IGBTs were a 40 A that problem was that when this NT type a very strong start current is flowing, and it shoots the normal IGBTs. only by a fat brick with nominal current 800A I could solve the problem.